MGB15N35CLT4 データシートの表示（PDF） - ON Semiconductor
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MGB15N35CLT4 Datasheet PDF : 8 Pages
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MGP15N35CL, MGB15N35CL, MGC15N35CL
t UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ 150°C)
Characteristic
Symbol
Single Pulse Collector–to–Emitter Avalanche Energy
EAS
VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TO–220
D2PAK
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
RθJC
RθJA
RθJA
TL
Value
300
150
Value
1.0
62.5
50
275
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector–Emitter Leakage Current
Gate–Emitter Clamp Voltage
Gate–Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
ON CHARACTERISTICS*
BVCES
ICES
IECS
BVGES
IGES
RG
RGE
IC = 2 mA
320
TJ = –40°C to 175°C
VCE = 300 V,
–
VGE = 0, TJ = 25°C
VCE = 300 V,
–
VGE = 0, TJ = 150°C
VCE = –24 V
–
IG = 5 mA
17
VGE = 10 V
384
–
–
–
10
Gate Threshold Voltage
Threshold Temperature Coefficient (Negative)
VGE(th)
–
IC = 1 mA
1.0
VGE = VCE
–
–
Collector–to–Emitter On–Voltage
Collector–to–Emitter On–Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
VCE(on)
VCE(on)
gfs
IC = 6 A, VGE = 4 V
–
IC = 10 A,
–
VGE = 4.5 V,
TJ = 150°C
VCE = 5 V, IC = 6 A 8.0
Input Capacitance
Output Capacitance
Transfer Capacitance
v v *Pulse Test: Pulse Width 300 µS, Duty Cycle 2%.
CISS
COSS
CRSS
VCC = 15 V
–
VGE = 0 V
–
f = 1 MHz
–
Typ
350
–
–
–
–
–
70
–
1.8
4.4
–
–
15
1000
130
5.0
Unit
mJ
Unit
°C/W
°C
Max
Unit
380
VDC
40
µADC
200
1.0
22
1000
–
26
mA
VDC
µADC
Ω
kΩ
2.1
VDC
–
mV/°C
1.8
VDC
1.8
VDC
–
Mhos
–
pF
–
–
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