MGB15N35CLT4 データシートの表示（PDF） - ON Semiconductor

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MGB15N35CLT4

Internally Clamped N-Channel IGBT

ON Semiconductor 

MGP15N35CL, MGB15N35CL, MGC15N35CL

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Test Conditions

SWITCHING CHARACTERISTICS*

Turn–Off Delay Time

Fall Time

td(off)

tf

VCC = 300 V,

IC = 10 A

RG = 1 kΩ,

L = 300 µH

Turn–On Delay Time

Rise Time

td(on)

tr

VCC = 10 V,

IC = 6.5 A

RG = 1 kΩ,

RL = 1 Ω

Gate Charge

QT

Q1

Q2

v v *Pulse Test: Pulse Width 300 µS, Duty Cycle 2%.

VCC = 300 V

IC = 15 A

VGE = 5 V

Min

Typ

Max

Unit

–

13

–

µSec

–

6.0

–

–

1.0

–

µSec

–

5.0

–

–

TBD

–

nC

–

TBD

–

–

TBD

–

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