MGSF2N02EL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 10 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
–
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
–
–
IGSS
–
VGS(th)
0.5
–
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 3.6 A)
(VGS = 2.5 Vdc, ID = 3.1 A)
RDS(on)
–
–
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss
–
Coss
–
Crss
–
SWITCHING CHARACTERISTICS (Note 4)
Turn–On Delay Time
td(on)
–
Rise Time
Turn–Off Delay Time
(VDD = 16 Vdc, ID = 2.8 Adc,
Vgs = 4.5 V, RG = 2.3 W)
tr
–
td(off)
–
Fall Time
tf
–
Gate Charge
(VDS = 16 Vdc, ID = 1.75 Adc,
VGS = 4.0 Vdc) (Note 3)
QT
–
Qgs
–
Qgd
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward Voltage
VSD
(IS = 1.0 Adc, VGS = 0 Vdc) (Note 3)
–
–
Reverse Recovery Time
(IS = 1.0 Adc, VGS = 0 Vdc,
dlS/ dt = 100 A/ms) (Note 3)
trr
–
ta
–
tb
–
Reverse Recovery Stored Charge
QRR
–
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
–
–
Vdc
22
–
mV/°C
mAdc
–
1.0
–
10
–
"100
nA
–
1.0
Vdc
–2.3
–
mV/°C
mW
78
85
105
115
150
–
pF
130
–
45
–
6.0
–
ns
95
–
28
–
125
–
3.5
–
nC
0.6
–
1.5
–
V
0.76
1.2
–
–
104
–
ns
42
–
62
–
0.20
–
mC
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