MJD210G(2011) データシートの表示（PDF） - ON Semiconductor

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MJD210G
(Rev.:2011)

Complementary Plastic Power Transistors

ON Semiconductor 

TA TC

2.5 25

2 20

1.5 15

1 10

0.5 5

00

25

MJD200 (NPN) MJD210 (PNP)

TA (SURFACE MOUNT)

TC

50

75

100

125

T, TEMPERATURE (°C)

Figure 1. Power Derating

VCC

+ 30 V

25 ms

+11 V

RC

0

RB

SCOPE

- 9 V

tr, tf ≤ 10 ns

51

D1

DUTY CYCLE = 1%

- 4 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

150

 1N5825 USED ABOVE IB ≈ 100 mA

 MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT,

REVERSE ALL POLARITIES

Figure 2. Switching Time Test Circuit

1K

500

td

300

200

100

50

30

20

tr

VCC = 30 V

IC/IB = 10

10

TJ = 25°C

5

3

2

MJD200

MJD210

1

0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1

2 3 5 10

IC, COLLECTOR CURRENT (A)

Figure 3. Turn−On Time

10K

5K

VCC = 30 V

3K

ts

IC/IB = 10

2K

IB1 = IB2

1K

TJ = 25°C

500

300

200

100

50

30

20

MJD200

tf

MJD210

10

0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1

2 3 5 10

IC, COLLECTOR CURRENT (A)

Figure 4. Turn−Off Time

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