MJD210 データシートの表示（PDF） - Unisonic Technologies
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MJD210 Datasheet PDF : 5 Pages
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MJD210
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
Continuous
IC
Peak
-5
A
-10
A
Base Current
IB
TC=25°C
Derate above 25°C
Total Device Dissipation
Ta=25°C (Note2)
PD
-1
A
12.5
W
0.1
W/°C
1.4
W
Derate above 25°C
0.011
W/°C
Junction Temperature
Storage Junction Temperature
TJ
TSTG
+150
°C
-65 ~ +150
°C
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted on minimum pad sizes recommended.
THERMAL DATA (Ta=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
89.3
10
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(Note 1) VCEO(SUS) IC=-10mA, IB=0
-25
Collector Cutoff Current
ICBO
VCB=-40V, IE=0
VCB=-40V, IE=0, TJ=125°C
Emitter Cutoff Current
IEBO VBE=-7V, IC=0
ON CHARACTERISTICS
IC=-500mA, VCE=-1V
70
DC Current Gain (Note 1)
hFE IC=-2A, VCE=-1V
45
IC=-5A, VCE=-2V
10
IC=-500mA, IB=-50mA
Collector-Emitter Saturation Voltage (Note 1) VCE(SAT) IC=-2A, IB=-200mA
IC=-5A, IB=-1A
Base-Emitter Saturation Voltage (Note 1)
VBE(SAT) IC=-5A, IB=-1A
Base-Emitter On Voltage (Note 1)
VBE(ON) IC=-2A, VCE=-1V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 2)
fT
IC=-100mA, VCE=-10V,
fTEST = 10MHz
65
Output Capacitance
COB VCB=-10V, IE=0, f=0.1MHz
Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≈ 2%.
2. fT =｜hFE｜‧fTEST.
MAX UNIT
V
-100 nA
-100 nA
-100 nA
180
-0.3
-0.75 V
-1.8
-2.5 V
-1.6 V
MHz
120 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R213-001.C
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