MJD210 データシートの表示（PDF） - Unisonic Technologies
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MJD210 Datasheet PDF : 5 Pages
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MJD210
TYPICAL CHARACTERISTICS
T A TC
2.5 25
2 20
VDS=10V
ID=6V
Power Derating
1.5 15
1 10
0.5 5
T A (Surface Mount )
TC
00
25
50
75
100
125
Temperature,T(℃)
PNP SILICON TRANSISTOR
Switching Time Test Circuit
25
µs
+11V
-9V
tr，tf≤10ns
Duty Cycle=1%
VCC +30V
RC
RB
D1
51
SCOPE
-4V
RB and RC Varied to Obtain Desired Current Levels
D1 Must be Fast Recovery Type, e.g.:
1N5825 Used Above IB ≈ 100mA for PNP Test
150 Circuit MSD6100 Used Below IB≈100mA Reverse
All Polaritries
1000
500
300
200
100
Turn-On Time
tD
tF
50
30
20
10
5
3
2
(VCC=30V,IC/IB=10,TJ=25℃)
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10
Collector Current,IC (A)
Turn-Off Time
10K
5K
3K
tS
2K
tF
1K
500
300
200
100
50
30
20
(VCC=30V,IC/IB=10,IB1=IB2,TJ=25℃)
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R213-001.C
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