MJD44H11-1G データシートの表示（PDF） - ON Semiconductor
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MJD44H11-1G Datasheet PDF : 9 Pages
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MJD44H11,
NJVMJD44H11 (NPN),
MJD45H11,
NJVMJD45H11 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Packages*
http://onsemi.com
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
12
3
4
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
AYWW
J4
xH11G
4
1
2
3
IPAK
CASE 369D
STYLE 1
AYWW
J4
xH11G
A
Y
WW
J4xH11
G
= Assembly Location
= Year
= Work Week
= Device Code
x = 4 or 5
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
August, 2012 − Rev. 14
Publication Order Number:
MJD44H11/D
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