MJE122 データシートの表示（PDF） - ON Semiconductor

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MJE122

COMPLEMENTARY SILICON POWER DARLINGTONS 5 AMPERES 100 VOLTS 30 WATTS

ON Semiconductor 

TA TC

4 80

3 60

TC

2 40

1 20

TA

0

0 20 40 60 80 100 120 140 160

T, TEMPERATURE (°C)

Figure 3. Maximum Power Derating

MJF122 MJF127

1

0.5

0.3

0.2

0.1

0.05

0.03

0.02

0.01

0.1

0.2 0.3 0.5

SINGLE PULSE

RθJC(t) = r(t) RθJC

TJ(pk) – TC = P(pk) RθJC(t)

1

2 3 5 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K

t, TIME (ms)

Figure 4. Thermal Response

10

5

3 TJ = 150°C

2

100 µs

1 ms

dc

5 ms

1

0.5

0.3

0.2

0.1

1

CURRENT LIMIT

SECONDARY BREAKDOWN

LIMIT

THERMAL LIMIT @

TC = 25°C (SINGLE PULSE)

23 5

10

20 30 50

100

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Secondary breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by secondary breakdown.

Motorola Bipolar Power Transistor Device Data

3

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