MJE13002 データシートの表示（PDF） - Inchange Semiconductor
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MJE13002 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE13002
CHARACTERISTICS
Tj=25℃ unles otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0
300
V
VCEsat-1
VCEsat-2
VCEsat-3
Collector-emitter saturation voltage IC=0.5A; IB=0.1A
Collector-emitter saturation voltage
IC=1A; IB=0.25A
TC=100℃
Collector-emitter saturation voltage IC=1.5A;IB=0.5A
0.5
V
1.0
1.0
V
3.0
V
VBEsat-1 Base-emitter saturation voltage
IC=0.5A; IB=0.1A
1.0
V
VBEsat-2 Base-emitter saturation voltage
ICEV
Collector cut-off current
IC=1A; IB=0.25A
TC=100℃
VCEV=Rated value; VBE (off) =1.5V
TC=100℃
1.2
1.1
V
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
1.0 mA
固IN电C半H导AN体GE SEMICONDUCTOR hFE-1
hFE-2
fT
COB
DC current gain
DC current gain
Transition frequency
Collector outoput capacitance
IC=0.5A ; VCE=2V
IC=1A ; VCE=2V
IC=0.1A ; VCE=10V;f=1MHz
IE=0;f=0.1MHz ; VCB=10V
8
40
5
25
4
MHz
21
pF
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V ,IC=1A
IB1=-IB2=0.2A
tp=25μs
duty cycle≤1%
0.05 0.1 μs
0.5 1.0 μs
2.0 4.0 μs
0.4 0.7 μs
2
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