MJE1320 データシートの表示（PDF） - Inchange Semiconductor
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MJE1320 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE1320
DESCRIPTION
·With TO-220 package
·High voltage
·Low collector saturation voltage
APPLICATIONS
·For high-voltage ,power switching in
inductive circuits and line operated
switchmode applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
IB
Base current
IBM
Base current-Peak
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
TC=100℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
·
VALUE
1800
900
9
2
5
1.5
2.5
80
32
-65~150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
MAX
1.56
UNIT
℃/W
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