MJE2955T データシートの表示（PDF） - Inchange Semiconductor
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MJE2955T Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
MJE2955T
DESCRIPTION
·With TO-220 package
·Complement to type MJE3055T
·DC current gain -hFE = 20–70 @ IC = -4 Adc
·Collector–emitter saturation voltage -
VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc
APPLICATIONS
·Designed for general–purpose
switching and amplifier applications.
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
Fig.1 simplified outline (TO-220) and symbol
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-70
-60
-5
UNIT
V
V
V
IC
Collector current
-10
A
IB
Base current
-6
A
PC
Collector power dissipation
TC=25℃
75
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.67
UNIT
℃/W
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