MJF18002 データシートの表示（PDF） - ON Semiconductor

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MJF18002

SWITCHMODE NPN Bipolar Power Transistor

ON Semiconductor 

100

TJ = 125°C

TJ = 25°C

10

MJE18002

TYPICAL STATIC CHARACTERISTICS

VCE = 1 V

100

TJ = 125°C

TJ = 25°C

TJ = −20°C

10

VCE = 5 V

1

00.0.011

00.1.010

1.10.000

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

1

1100.0.000 00.0.011

00..1100

11..0000

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volts

1100..0000

2

TJ = 25°C

10.00

1.00

1

0

00.0.00011

1.5 A

1A

0.4 A

IC = 0.2 A

00.0.01100

0.01.01000

IB, BASE CURRENT (mA)

2A

0.10 IC/IB = 10

IC/IB = 5

0.01

11.0.00000 00..0011

TJ = 25°C

TJ = 125°C

00..1100

11..0000

IC, COLLECTOR CURRENT (AMPS)

1100..0000

Figure 3. Collector Saturation Region

Figure 4. Collector−Emitter Saturation Voltage

1.1

1000

1.0

0.9

0.8

TJ = 25°C

0.7

0.6

TJ = 125°C

0.5

0.4

00.0.011

00.1.010

1.10.000

IC, COLLECTOR CURRENT (AMPS)

100

10

IC/IB = 10

IC/IB = 5

1

101.00.000 11

Figure 5. Base−Emitter Saturation Region

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4

Cib

TJ = 25°C

f = 1 MHz

Cob

1100

110000

11000000

VCE, COLLECTOR−EMITTER (VOLTS)

Figure 6. Capacitance

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