MJW21191 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
MJW21191 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJW21191
DESCRIPTION
·DC Current Gain
·High Area of Safe Operation
APPLICATIONS
·Designed for power audio output, or high power drivers in
audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Emitter Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Pulsed
-16
A
IBB
Base Current-Continuous
-2
A
PD
Total Power Dissipation (TC=25℃)
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
Rth j-C ThermalResistance Junction To Case 0.65
UNIT
℃/W
isc Website：www.iscsemi.cn
Share Link: 