MMBD4448 データシートの表示（PDF） - Willas Electronic Corp.
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MMBD4448 Datasheet PDF : 2 Pages
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WILLAS FM120-M+
150mA Surface Mount Switching Diode-100V
1.0A SURFACE MOUNT SCHOTTKY SBOARTR-2IE3RPRaEcCkTaIgFIeERS -20V- 200V
MMBD4448 THRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
10o00ptimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
•1H00igh surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
10
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Ha1logen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• C0.1ase : Molded plastic, SOD-123H
0.2
0.4
0.6
0.8
1.0
1.2
1.4
,
• Terminals :Plated terminals, solderable per MIL-STD-750
FORWARD VOLTAGE, Volts
Method 2026
• Polarity : Indicated by cathode band
•
FIG. 1-TYPICAL F
Mounting Position
ORWAR
: Any
D
CHARACTERISTIC
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
10
TJ =125OC
0.146(3.7)
0.130(3.3)
1.0
0.1
TJ =75 OC
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.01
0.001
0
TJ =25 OC
0.040(1.0)
0.024(0.6)
0.031(02.08) Typ.
40
60
80
REVERSE VOLTAGE, Volts
0.0311(00.08) Typ.
Dimensions in inches and (millimeters)
FIG. 2-TYPICAL REVERSE CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings a5t0025℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
400
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking C3o0d0e
Maximum Recurrent Peak Reverse Voltage
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 Vo
Maximum 2R0M0 S Voltage
VRMS
14
21
28
35
42
56
70
105
140 Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 Vo
Maximum 1A0v0erage Forward Rectified Current
IO
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
Am
superimposed 0on rated load50(JEDEC meth1o0d0)
150
200
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction CaApMacBitaIEncNeT(NToEteM1P)ERATURE(OC) CJ
40
℃
120
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage TemperFatIuGre. 3RaPnOgeWER DERATING CURVETSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
IR
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-21012-06
WILLAWSILELLAESCETLREOCNTIRCOCNOICRCPO. RP.
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