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MMBD7000 データシートの表示(PDF) - General Semiconductor

部品番号
コンポーネント説明
メーカー
MMBD7000
GE
General Semiconductor GE
MMBD7000 Datasheet PDF : 2 Pages
1 2
MMBD7000
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified (per diode).
Reverse Breakdown Voltage at IR=100mA
Leakage Current
at VR = 50 V
at VR = 100 V
at VR = 50 V, Tj = 125¡C
Forward Voltage
at IF = 1mA
at IF = 10mA
at IF = 100mA
Capacitance
at VR = 0; f = 1MHZ
Reverse Recovery Time
from IF = 10mA to IR = 10 mA
measured at Irr = 1mA, RL = 100 W
SYMBOL
VBR
IR
IR
IR
VF
VF
VF
Ctot
trr
MIN.
100
-
-
-
0.55
0.67
0.75
-
-
MAX.
-
1.0
3.0
100
0.70
0.82
1.10
1.5
4.0
UNIT
Volts
mA
mA
mA
Volts
Volts
Volts
pF
ns

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