MMBD7000LT1 データシートの表示（PDF） - Willas Electronic Corp.

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MMBD7000LT1

200mA Surface Mount Switching Diode-100V SOT-23 Package

Willas Electronic Corp. 

WILLAS FM120-M+

200mA Surface Mount Switching Diode-100V

1.0A SURFACE MOUNT SCHOTTKYSOBATR-2R3IEPRaRcEkCaTgIeFIERS

-20V-

20M0VMBD7000FLMT11T2H0R0U-M

SOD-123+ PACKAGE

Pb Free Produc

Features

• Batch process design, excellent power dissipation offers

Package outline

better reverse leakage current and thermal resistance.

•+1Lo0opwtVimpirzoe8fi2ble0osΩaurdrfas2pc.0eackmeo. unted application in order to

• Low power loss, high efficiency.

• High current capability, low forward volt0a.1gµeFdrop.

• High surge cap1a0b0ilµitHy. I F

• Guardring for overvoltage protection.

tr

tp

t

10%

SOD-123H

IF

0.146(3.7)

0.130(3.3)

t rr

0.012(0.3) Typ.

t

• Ultra high-speed switching.

• Silicon epitaxi0a.1l pµlFanar chip, mDeUtTal silicon junction.

90%

• Lea50dΩ-frOeUeTpPaUrTts meet environmental stand50aΩrdIsNPoUf T

MIPLU-SLSTED-19500 /228

SAMPLING

• RoHGSENpErRoAdTuOctRfor packing code suffix "G" OSCILLOSCOPE

VR

INPUT SIGNAL

IR

Halogen free product for packing code suffix "H"

0.071(1.8)

0.056(1.4)

i R(REC) = 1.0 mA

OUTPUT PULSE

(I F = I R = 10 mA; MEASURED

at i R(REC) = 1.0 mA)

Mechanical data

• Epoxy : UL94-V0 ratNedotfelas:m1e. rAe2ta.0rdkaΩntvariable resistor adjusted for a Forward Current (I F ) of 10mA.

•

Case

:

Molded

plastiNc,oSteOs:D2-.1In2p3uHt

pulse

is

adjusted

so

I

R(peak)

is

equal

to

10mA.

0.031(0.8)

Typ.

•

Terminals

:Plated

t

e

Notes:

rminal

3.

s,

t

s

op

»

ld

terrr

a

b

l

e

per

,

MIL-STD-750

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Method 2026

Figure 1. Recovery Time Equivalent Test Circuit

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

• Weight : Approximated 0.011 gCraUmRVES APPLICABLE TO EACH CATHODE

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

100

10

Ratings at 25℃ ambient temperature unless otherwise specified.

T A =150°C

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derateTAc=u8rr5e°nCt by 20%

T A= –40°C

T A =125°C

1.0

10

RATINGS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

Marking Code

12

Maximum Recurrent Peak Reverse Voltage T A = 25°CVRRM

20

13 0.1 14

30

40

15 T A1=685°C

18

50

60

80

10

100

115 120

150

200

Maximum R1M.0S Voltage

VRMS

14

21

28

35 T A 4=525°C

56

70

105

140

Maximum DC Blocking Voltage

VDC

20

30 0.01 40

50

60

80

100

150

200

Maximum Average Forward Rectified Current

IO

0.1

Peak Forward S0.u2rge Curre0n.4t 8.3 ms s0in.6gle half si0n.8e-wave 1.I0FSM

1.2

superimposed on rated load (JEDEC method)

V F , FORWARD VOLTAGE (VOLTS)

Typical Thermal ResistaFnicgeu(Nroete22.) Forward VoltaRgΘeJA

Typical Junction Capacitance (Note 1)

CJ

Operating Temperature Range

TJ

Storage Temperature Range

0.68

TSTG

0.001

0

-55 to +125

T A =251°C.0

10

20 30 30

40

50

V R , REVERSE 4V0OLTAGE (VOLTS)

Figure 3. Le12a0kage Current

-55 to +150

- 65 to +175

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

0.64

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=01.6205℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

VF

0.50

0.70

0.85

0.9

0.92

IR

0.5

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage0o.5f64.0 VDC.

2- Thermal Resistance From Junction to Ambient

0.52

0

2.0

4.0

6.0

8.0

V R , REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

2012-06

2012-1

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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