MMBT2222A(2004) データシートの表示（PDF） - Diotec Semiconductor Germany

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MMBT2222A
(Rev.:2004)

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

MMBT2222, MMBT2222A

Switching Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

Version 2004-05-04

Power dissipation – Verlustleistung

2.9 ±0.1

1.1

0.4

3

Type

Code

1

2

1.9

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1=B 2=E 3=C

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

NPN

250 mW

SOT-23

(TO-236)

0.01 g

Maximum ratings (TA = 25°C)

Collector-Emitter-voltage

B open VCE0

Collector-Base-voltage

E open VCB0

Emitter-Base-voltage

C open VEB0

Power dissipation – Verlustleistung

Ptot

Collector current – Kollektorstrom (dc)

IC

Junction temp. – Sperrschichttemperatur

Tj

Storage temperature – Lagerungstemperatur

TS

Grenzwerte (TA = 25°C)

MMBT2222 MMBT2222A

30 V

40 V

60 V

75 V

5V

6V

250 mW 1)

600 mA

150°C

- 65…+ 150°C

Characteristics (Tj = 25°C)

Collector-Base cutoff current – Kollektorreststrom

IE = 0, VCB = 50 V

IE = 0, VCB = 60 V

MMBT2222

ICB0

MMBT2222A ICB0

IE = 0, VCB = 50 V, Tj = 150°C MMBT2222

ICB0

IE = 0, VCB = 60 V, Tj = 150°C MMBT2222A ICB0

Emitter-Base cutoff current – Emitterreststrom

IC = 0, VEB = 3 V

MMBT2222A IEB0

Collector saturation voltage – Kollektor-Sättigungsspannung 1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

MMBT2222

MMBT2222A

MMBT2222

MMBT2222A

VCEsat

VCEsat

VCEsat

VCEsat

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

10 nA

–

–

10 nA

–

–

10 µA

–

–

10 µA

–

–

100 nA

–

–

400 mV

–

–

300 mV

–

–

1.6 V

–

–

1V

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

20

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