MMBT2222A(2004) データシートの表示（PDF） - Diotec Semiconductor Germany

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MMBT2222A
(Rev.:2004)

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

Switching Transistors

MMBT2222, MMBT2222A

Characteristics (Tj = 25°C)

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 150 mA, IB = 15 mA

MMBT2222

MMBT2222A

VBEsat

VBEsat

IC = 500 mA, IB = 50 mA

MMBT2222

MMBT2222A

VBEsat

VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 10 V, IC = 0.1 mA

hFE

VCE = 10 V, IC = 1 mA

hFE

VCE = 10 V, IC = 10 mA

hFE

VCE = 10 V, IC = 150 mA

hFE

VCE = 1 V, IC = 150 mA

hFE

VCE = 10 V, IC = 500 mA

hFE

h-Parameters at VCE = 10V, f = 1 kHz, IC = 1 mA / 10 mA 2)

Small signal current gain

MMBT2222

hfe

Kleinsignal-Stromverstärkung MMBT2222A hfe

Input impedance

Eingangs-Impedanz

MMBT2222

hie

MMBT2222A hie

Output admittance

Ausgangs-Leitwert

MMBT2222

hoe

MMBT2222A hoe

Gain-Bandwidth Product – Transitfrequenz

VCE = 10 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

Noise figure – Rauschzahl

VCE = 10 V, IC = 100 µA,

RS = 1 kΩ, f = 1 kHz

MMBT2222A

F

Switching times – Schaltzeiten

delay time

rise time

VCC = 30 V, - VBE = 0.5 V

td

IC = 150 mA, IB1 = 15 mA

tr

storage time

VCC = 30 V, IC = 150 mA

ts

fall time

IB1 = - IB2 = 15 mA

tf

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

600 mV

–

–

–

–

–

1.3 V

1.2 V

2.6 V

2V

35

–

–

50

–

–

75

–

–

100

–

300

50

–

–

40

–

–

50

–

300

75

–

375

2 kΩ

–

8 kΩ

0.25 kΩ

–

1.25 kΩ

5 µS

25 µS

–

35 µS

–

200 µS

250 MHz

–

–

–

4 pF

8 pF

–

20 pF

25 pF

–

–

4 dB

–

–

10 ns

–

–

25 ns

–

–

225 ns

–

–

60 ns

RthA

420 K/W 3)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

MMBT2907, MMBT2907A

Marking - Stempelung

MMBT2222 = (M)1B

MMBT2222A = 1P

1) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2) MMBT2222: IC = 1 mA, MMBT2222A: IC = 10 mA

3) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

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