MMBT2222LT1 データシートの表示（PDF） - Leshan Radio Company,Ltd
部品番号
コンポーネント説明
メーカー
MMBT2222LT1 Datasheet PDF : 5 Pages
| |||
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
V CEO
V CBO
V EBO
IC
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
2222
30
60
5.0
600
2222A
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage MMBT2222
(I C = 10 mAdc, I B = 0)
MMBT2222A
Collector–Base Breakdown Voltage
MMBT2222
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
MMBT2222A
MMBT2222
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
MMBT2222A
MMBT2222A
( V CE = 60 Vdc, I EB(off) = 3.0Vdc)
Collector Cutoff Current
(V CB = 50 Vdc, I E = 0)
(V CB = 60 Vdc, I E = 0)
(V CB = 50 Vdc, I E = 0, T A = 125°C)
(V CB = 60 Vdc, I E = 0, T A = 125°C)
Emitter Cutoff Current
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
(V EB = 3.0 Vdc, I C = 0)
Base Cutoff Current
MMBT2222A
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
MMBT2222A
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
30
40
V (BR)CBO
60
75
V (BR)EBO
5.0
6.0
I CEX
—
I CBO
––
––
––
––
I EBO
—
I BL
—
MMBT2222LT1
MMBT2222ALT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Max
Unit
—
Vdc
––
—
Vdc
—
Vdc
––
10
nAdc
µAdc
0.01
0.01
10
10
100
nAdc
20
nAdc
O4–1/5
Share Link: 