MMBT2907A データシートの表示（PDF） - Galaxy Semi-Conductor
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MMBT2907A Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
PNP General Purpose Amplifier
FEATURES
z Epitaxial planar die construction.
z Complementary NPN type available
Pb
Lead-free
MMBT2222A.
z Ideal for medium power amplification and switching.
MMBT2907A
APPLICATIONS
z This device is designed as a general purpose amplifier
and switching.
z The useful dynamic range extends to 600mA as a switch
and to 100MHz as a amplifier.
ORDERING INFORMATION
Type No.
Marking
MMBT2907A
2F
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-600
mA
PD
Total Device Dissipation
300
mW
RθjA
Thermal Resistance Junction to Ambient
375
℃/W
Tj,Tstg
Junction and Storage Temperature
-55to+150
℃
These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
Document number: BL/SSSTC072
Rev.A
www.galaxycn.com
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