MMBT2907AWT1 データシートの表示（PDF） - Willas Electronic Corp.

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MMBT2907AWT1

PNP Silicon General Purpose Transistor

Willas Electronic Corp. 

WILLAS

FM120-M+

MMBT2907AWTTH1RU

1.0GA SeURnFeACrEaMlOPUNuT SrCpHoOTsTKeY BTArRaRnIERsRiEsCtToIFIrERS -20V- 200V

SOD-123+ PACKAGE

FM1200-M+

Pb Free Product

Features

• Batch process design, excellent power dissipation offers

Package outline

bEeLttEerCrTeRveICrsAeLleCakHaAgRe AcuCrTreEnRt IaSnTdICthSer(mT aAl =re2s5i°sCtaunnclees. s otherwise noted) (Continued)

SOD-123H

• Low profile surface mounted application in order to

optimize board spaceC. haracteristic

Symbol

Min

Max

Unit

• LOowNpCoHwAerRlAosCsT, EhiRghISeTfIfCicSiency.

• High DcuCrrCeunrtrecnatpGaabinil(i1ty), low forward voltage drop.

hFE

0.146(3.7)

0.130(3.3)

–– 0.012(0.3) Typ.

• High (sIuCr=g–e0c.1apmaAbdicli,tyV. CE =–10 Vdc)

75

––

• Guar(dIrCin=g–f1o.r0omvAedrvco, lVtaCgEe= p–r1o0teVcdtcio) n.

• Ultra (hI iCg=h-–s1p0emedAdscw, iVtcChEi=ng–.10 Vdc)

• Silico(nI Ce=p–it1a5x0iaml Apdlacn, aVrCcEh=ip–,1m0Vedtca)l silicon junction.

• LMeIaLd-S(-IfTrCeD=e-–1p59a05r0t0sm0mA/2dec2e,8tVenCEv=ir–o1n0mVednct)al standards of

• RoHSCporloledcutcotr–foErmpiattcekriSngatcuoradteiosnuVffoixlta"Gge"(1)

100

100

100

50

VCE(sat)

––

0.071(1.8)

––

0.056(1.4)

––

––

Vdc

Halog(eI nC =fre–e15p0romduAcdtcf,oIr Bp=ac–k1in5gmcAoddce) suffix "H"

––

–0.4

Mech(I Ca=n–i5c00amlAddca, ItBa= –50 mAdc)

––

–1.6

Base–Emitter Saturation Voltage(1)

• Epoxy : UL94-V0 rated flame retardant

(I C = –150 mAdc, I B = –15mAdc)

• Case(I: CM=o–ld5e0d0mplAadsct,icI,BS=O–D50-1m2A3dHc )

,

• Terminals :Plated terminals, solderable per MIL-STD-750

y SMALL–SIGNAL CHARACTERISTICS

Method 2026

r •

Current–Gain — Bandwidth Product(4)

Polarity : Indicated by cathode band

(I C = –50mAdc, V CE= 20Vdc, f = 100MHz)

a • MounOtiuntgpuPtoCsaiptiaocnita: nAcney

• Weig(hVt :CBA=pp–r1o0xVimdca,teI dE =00.0, 1f 1=g1r.a0mMHz)

V BE(sat)

––

0.031(0.8) Typ.

––

–1.3

–2.6

0.04V0(d1.c0)

0.024(0.6)

0.031(0.8) Typ.

f

T

C

obo

Dimens2io0n0s in inches and––(millimeters)MHz

––

8.0

pF

in Input Capacitance

MAXIMUM RATINGS AND ELECTRICAL CHARACTERCISTICS ––

Ratings

at

(V

25℃

aEBm=bi–e2n.t0tVedmcp, eI rCa=tu0re, fu=nl1e.s0sMoHthze)rwise

specified.

ibo

Single phaSsWe hITalCf wHaINveG, 6C0HHzA,RreAsCistTivEeRoIfSinTdIuCcStive load.

30

pF

For capacitive Tlouarnd–, OdenraTtime ecurrent by 20% (V CC = –30 Vdc,

t on

—

45

lim Delay TRimAeTINGS

I C = –1S50YMmBAOdLc,FIMB112=0-–M1H5FmM1A3d0c-M) H FM140-Mt Hd FM150-MH FM—160-MH FM180-M1H0 FM1100-MHnFsM1150-MH FM1200-MH UNIT

Marking Code Rise Time

12

13

14 t r 15

1—6

18 40 10

115 120

Maximum RecurSretonrtaPgeeakTiRmeeverse Voltage

(V CC = –V6R.0RMVdc, 20

30

40 t s 50

—60

80 80 100

150

200 Volts

e Maximum RMS VFoalltlaTgime e

I C = –15V0RMmSAdc,I B11 =4 I B2 = 1251mAdc) 28 t f 35

—42

Turn–Off Time

r Maximum

DC

Blocking Voltage

1. Pulse Test: Pulse

Width

<300

µs,

DuVtDyCCycle

<202.0%.

30

40 t off 50

—

60

56 30 70

100

80

100

ns 105

150

140 Volts

200 Volts

P Maximum Average Forward Rectified Current

IO

1.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

30

Amps

superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2)

RΘJA

40

℃/W

Typical Junction Capacitance (Note 1)

CJ

120

PF

Operating Temperature Range

TJ

-55 to +125

-55 to +150

℃

Storage Temperature Range

TSTG

- 65 to +175

℃

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

VF

0.50

0.70

0.85

0.9

0.92 Volts

IR

0.5

mAmps

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

201220-1112-06

WILWLAILSLAESLEECLTERCOTRNOICNICCOCROPR.P.

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