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MMBT3416LT3G(2009) データシートの表示(PDF) - ON Semiconductor

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MMBT3416LT3G
(Rev.:2009)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBT3416LT3G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MMBT3416LT3G
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
IC = 1.0 mA
300 mA
10
BANDWIDTH = 1.0 Hz
RS = 0
7.0
100 mA
5.0
10 mA
3.0
30 mA
2.0
10 20
50 100 200 500 1 k 2 k
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
5 k 10 k
100
50
IC = 1.0 mA
20
10
5.0
300 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
100 mA
2.0
1.0
0.5
0.2
0.1
10
30 mA
10 mA
20 50 100 200 500 1 k 2 k
f, FREQUENCY (Hz)
Figure 4. Noise Current
5 k 10
500 k
200 k
100 k
50 k
20 k
10 k
5 k
2 k
1 k
500
200
100
50
10
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB 4.0 dB
6.0 dB
10 dB
20 30 50 70 100
200 300 500 700 1 k
IC, COLLECTOR CURRENT (mA)
Figure 5. Narrow Band, 100 Hz
1 M
500 k
200 k
100 k
50 k
20 k
10 k
5 k
2 k
1 k
500
200
100
10
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
20 30 50 70 100
200 300 500 700 1 
IC, COLLECTOR CURRENT (mA)
Figure 6. Narrow Band, 1.0 kHz
500 k
200 k
100 k
50 k
20 k
10 k
5 k
2 k
1 k
500
200
100
50
10
10 Hz to 15.7 kHz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Wideband
500 700 1 k
Noise Figure is defined as:
ǒ Ǔ NF + 20 log10
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3
In = Noise Current of the Transistor referred to the input. (Figure 4
K = Boltzman’s Constant (1.38 x 1023 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
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