MMBT3904 データシートの表示（PDF） - Daya Electric Group Co., Ltd.

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MMBT3904

SOT-23 Plastic-Encapsulate Transistors

Daya Electric Group Co., Ltd. 

SOT-23 Plastic-Encapsulate Transistors

MMBT3904 TRANSISTOR (NPN)

FEATURES

z As complementary type the PNP transistor MMBT3906 is recommended

z Epitaxial planar die construction

MARKING: 1AM

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

Storage Temperature

Value

60

40

6

200

200

625

150

-55 to +150

Units

V

V

V

mA

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay Time

Rise Time

Storage Time

Fall Time

Symbol

VCBO

VCEO

VEBO

ICBO

ICEX

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(sat)

fT

td

tr

ts

tf

Test conditions

IC= 10μA, IE=0

IC= 1mA, IB=0

IE=10μA, IC=0

VCB=60V, IE=0

VCE=30V,VBE(off)=3V

VEB=5V, IC=0

VCE=1V, IC=10mA

VCE=1V, IC= 50mA

VCE=1V, IC= 100mA

IC=50mA, IB= 5mA

IC= 50mA, IB= 5mA

VCE= 20V, IC= 10mA,f=100MHz

VCC=3V,VBE=-0.5V

IC=10mA, IB1=-IB2=1.0mA

VCC=3.0V,IC=10mAdc

IB1=-IB2=1mA

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

MIN MAX UNIT

60

V

40

V

6

V

0.1 μA

50 nA

0.1 μA

100 400

60

30

0.3

V

0.95

V

300

MHz

35

nS

35

nS

200

nS

50

nS

CLASSIFICATION OF hFE(1)

Rank

O

Range

100-200

Y

200-300

G

300-400

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