MMBT3904WT1 データシートの表示（PDF） - Willas Electronic Corp.

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MMBT3904WT1

General Purpose Transistors

Willas Electronic Corp. 

General Purpose Transistors

MMBT3906WT1

STATIC CHARACTERISTICS

NPN

MMBT3904WT1

PNP

MMBT3906WT1

20

10

0.7

0.5

0.3

0.2

0.1

0.1

MMBT3906WT1

T J = +125°C

+25°C

–55°C

V CE = 1.0 V

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0 7.0 10

20

30

50 70 100

200

I C , COLLECTOR CURRENT (mA)

Figure 31. DC Current Gain

1.0

0.8

I C=1.0 mA

0.6

MMBT3906WT1

10 mA

30 mA

T J = 25°C

100 mA

0.4

0.2

0

0.01

0.02 0.03

0.05 0.07

0.1

0.2

0.3

0.5 0.7 1.0

I B , BASE CURRENT (mA)

Figure 32. Collector Saturation Region

2.0 3.0

5.0 7.0 10

1.2

T J = 25°C

1.0

0.8

V BE(sat) @ I C /I B =10

V BE @ V CE =1.0 V

1.0

0.5

θ VC for V CE(sat)

0

+25°C TO +125°C

–55°C TO +25°C

0.6 MMBT3906WT1

0.4

0.2

V CE(sat) @ I C /I B =10

– 0.5 MMBT3906WT1

–1.0

–1.5

θ VB for V BE(sat)

+25°C TO +125°C

–55°C TO +25°C

0

1.0

2.0

5.0

10

20

50

100

200

C , COLLECTOR CURRENT (mA)

Figure 33. “ON” Voltages

–2.0

0

20 40 60 80 100 120 140 160 180 200

I C , COLLECTOR CURRENT (mA)

Figure 34. Temperature Coefficients

2012-11

WILLAS ELECTRONIC CORP.

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