MMBT3904WT1 データシートの表示（PDF） - Willas Electronic Corp.

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MMBT3904WT1

General Purpose Transistors

Willas Electronic Corp. 

General Purpose Transistors

NPN

MMBT3904WT1

PNP

MMBT3906WT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS (2)

DC Current Gain

h FE

––

(I C = 0.1 mAdc, V CE = 1.0 Vdc)

MMBT3904WT1

40

––

(I C = 1.0 mAdc, V CE = 1.0 Vdc)

70

––

(I C = 10 mAdc, V CE = 1.0 Vdc)

100

300

(I C = 50 mAdc, V CE = 1.0 Vdc)

60

––

(I C = 100 mAdc, V CE = 1.0 Vdc)

30

––

(I C = –0.1 mAdc, V CE = –1.0 Vdc)

MMBT3906WT1

60

––

(I C = –1.0 mAdc, V CE = –1.0 Vdc)

80

––

(I C = –10 mAdc, V CE = –1.0 Vdc)

100

300

(I C = –50 mAdc, V CE = –1.0 Vdc)

60

––

(I C = –100 mAdc, V CE = –1.0 Vdc)

30

––

Collector–Emitter Saturation Voltage

VCE(sat)

Vdc

(I C = 10 mAdc, I B = 1.0 mAdc)

MMBT3904WT1

––

0.2

(I C = 50 mAdc, I B = 5.0 mAdc)

––

0.3

(I C = –10 mAdc, I B = –1.0 mAdc)

MMBT3906WT1

––

– 0.25

(I C = –50 mAdc, I B = –5.0 mAdc)

––

– 0.4

Base–Emitter Saturation Voltage

V BE(sat)

Vdc

(I C = 10 mAdc, I B = 1.0 mAdc)

MMBT3904WT1

0.65

0.85

(I C = 50 mAdc, I B = 5.0 mAdc)

––

0.95

(I C = –10 mAdc, I B = –1.0 mAdc)

MMBT3906WT1

– 0.65

– 0.85

(I C = –50 mAdc, I B = –5.0 mAdc)

––

– 0.95

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)

(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz)

Output Capacitance

(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)

(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)

Input Capacitance

(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)

(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)

Input Impedance

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)

Small–Signal Current Gain

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)

Output Admittance

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)

Noise Figure

(V CE= 5.0Vdc, I C = 100µAdc, R S=1.0 kΩ, f =1.0kHz)

(V CE= –5.0Vdc, I C = –100 µAdc, R S=1.0 kΩ, f =1.0kHz)

MMBT3904WT1

MMBT3906WT1

MMBT3904WT1

MMBT3906WT1

MMBT3904WT1

MMBT3906WT1

MMBT3904WT1

MMBT3906WT1

MMBT3904WT1

MMBT3906WT1

MMBT3904WT1

MMBT3906WT1

MMBT3904WT1

MMBT3906WT1

MMBT3904WT1

MMBT3906WT1

fT

C obo

C ibo

h ie

h re

h fe

h oe

NF

MHz

300

––

250

––

pF

––

4.0

––

4.5

pF

––

8.0

––

10.0

kΩ

1.0

10

2.0

12

X 10 –4

0.5

8.0

0.1

10

—

100

400

100

400

µmhos

1.0

40

3.0

60

dB

––

5.0

––

4.0

2012-11

WILLAS ELECTRONIC CORP.

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