MMBT3904WT1 データシートの表示（PDF） - Willas Electronic Corp.
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MMBT3904WT1 Datasheet PDF : 11 Pages
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General Purpose Transistors
NPN
MMBT3904WT1
PNP
MMBT3906WT1
SWITCHING CHARACTERISTICS
Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc)
(V CC = –3.0 Vdc, V BE = 0.5 Vdc)
MMBT3904WT1
MMBT3906WT1
td
—
—
35
35
ns
Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc)
MMBT3904WT1
tr
—
35
(I C = –10 mAdc, I B1 = –1.0 mAdc)
MMBT3906WT1
—
35
ns
Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc)
MMBT3904WT1
ts
(V CC = –3.0 Vdc, I C = –10 mAdc)
MMBT3906WT1
Fall Time (I B1 = I B2 = 1.0 mAdc)
MMBT3904WT1
tf
(I B1 = I B2 = –1.0 mAdc)
MMBT3906WT1
—
200
—
225
ns
—
50
—
75
ns
2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
300 ns
DUTY CYCLE = 2%
– 0.5 V
MMBT3904WT1
+10.9 V
10 k
<1 ns
+3 V
275
10 < t 1 < 500 µs t 1
DUTY CYCLE = 2%
+10.9 V
C S < 4.0 pF*
0
– 9.1 V
10 k
1N916
<1.0 ns
*Total shunt capacitance of test jig and connectors
+3 V
275
C S < 4.0 pF*
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
MMBT3904WT1
7.0
5.0
C ibo
3.0
2.0
C obo
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
5000
3000
2000
V CC = 40 V
I C / I B = 10
1000
700
500
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
T J = 25°C
T J = 125°C
MMBT3904WT1
QT
QA
20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
I , COLLECTOR CURRENT (mA)
C
Figure 4. Charge Data
2012-11
WILLAS ELECTRONIC CORP.
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