MMBT3906LT1 データシートの表示（PDF） - Motorola => Freescale
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MMBT3906LT1 Datasheet PDF : 8 Pages
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MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc,
IC = –10 mAdc, IB1 = –1.0 mAdc)
Storage Time
Fall Time
(VCC = –3.0 Vdc, IC = –10 mAdc,
IB1 = IB2 = –1.0 mAdc)
v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
HFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
60
80
100
60
30
—
—
–0.65
—
250
—
—
2.0
0.1
100
3.0
—
—
—
—
—
Max
Unit
—
—
—
300
—
—
Vdc
–0.25
–0.4
Vdc
–0.85
–0.95
MHz
—
pF
4.5
pF
10
kΩ
12
X 10– 4
10
—
400
mmhos
60
dB
4.0
35
ns
35
225
ns
75
+0.5 V
10.6 V
< 1 ns
10 k
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
0
CS < 4 pF*
10 < t1 < 500 ms t1
DUTY CYCLE = 2%
< 1 ns
10.9 V
10 k
1N916
3V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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