MMBT4401LT1 データシートの表示（PDF） - Willas Electronic Corp.
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MMBT4401LT1 Datasheet PDF : 6 Pages
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General Purpose Transistor
MMBT4401LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS ( 3 )
DC Current Gain
hFE
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
20
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
40
(I C = 10 mAdc, V CE = 1.0 Vdc)
80
(I C = 150 mAdc, V CE = 1.0 Vdc)
100
(I C = 500 mAdc, V CE = 2.0 Vdc)
40
Collector–Emitter Saturation Voltage
VCE(sat)
(I C = 150 mAdc, I B = 15 mAdc)
––
(I C = 500 mAdc, I B = 50 mAdc)
––
Base–Emitter Saturation Voltage
V BE(sat)
(I C = 150 mAdc, I B = 15 mAdc)
0.75
(I C = 500 mAdc, I B = 50 mAdc)
––
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz)
250
Collector–Base Capacitance
C cb
(V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz)
––
Emitter–Base Capacitance
C eb
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
––
Input Impedance
h ie
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
1.0
Voltage Feedback Ratio
h re
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
0.1
Small–Signal Current Gain
h fe
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
40
Output Admittance
h oe
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
1.0
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V EB = 2.0 Vdc
td
—
Rise Time
I C = 150 mAdc, I B1 = 15 mAdc)
tr
—
Storage Time
(V CC = 30 Vdc, I C = 150 mAdc
ts
—
Fall Time
I B1 = I B2 = 15 mAdc)
tf
—
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Max
Unit
––
––
––
––
300
––
Vdc
0.4
0.75
Vdc
0.95
1.2
MHz
––
pF
6.5
pF
30
kΩ
15
X 10 –4
8.0
—
500
µmhos
30
15
20
ns
225
ns
30
+ 16 V
0
– 2.0V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100µs,
DUTY CYCLE = 2%
+30 V
1.0 kΩ
<2.0 ns
200 Ω
+ 16 V
C S* < 10 pF
0
–14 V
1.0 to 100µs,
DUTY CYCLE = 2%
+30 V
1.0 kΩ
< 20 ns 1N916
Scope rise time < 4.0ns
– 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
200Ω
C S*< 10 pF
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2012-11
WILLAS ELECTRONIC CORP.
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