MMBT4401LT1 データシートの表示（PDF） - Willas Electronic Corp.

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MMBT4401LT1

General Purpose Transistor

Willas Electronic Corp. 

General Purpose Transistor

MMBT4401LT1

SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

V CE = 10 Vdc, T A = 25°C

Bandwidth = 1.0 Hz

10

10

I C = 1.0 mA, R S = 150 Ω

f = 1.0 kHz

8.0

I C = 500 µA, R S = 200 Ω

R S = OPTIMUM

I C = 100 µA, R S = 2.0 kΩ

RS = SOURCE

8.0

I C = 50 µA, R S = 4.0 kΩ

RS = RESISTANCE

6.0

6.0

I C = 50 µA

I C = 100 µA

I C = 500 µA

I C = 1.0 mA

4.0

4.0

2.0

2.0

0

0.010.02 0.05 0.1 0.2

0.5 1.0 2.0 5.0 10 20

f , FREQUENCY (kHz)

Figure 9. Frequency Effects

50 100

0

500 100 200

500 1.0k 2.0k 5.0k 10k 20k 50k 100k

R S, SOURCE RESISTANCE (kΩ)

Figure 10. Source Resistance Effects

h PARAMETERS

(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)

This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of

ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4401LT1

lines, and the same units were used to develop the correspondingly numbered curves on each graph.

300

50

LMBT4401LT1 UNIT 1

200

20

LMBT4401LT1 UNIT 2

100

70

LMBT4401LT1 UNIT 1

LMBT4401LT1 UNIT 2

50

30

20

0.1

10

7.0

5.0

3.0

2.0

0.2 0.3 0.5 0.7 1.0

2.0 3.0 7.0 5.0 10

I C , COLLECTOR CURRENT (mA)

Figure 11. Current Gain

LMBT4401LT1 UNIT 1

LMBT4401LT1 UNIT 2

1.0

0.7

0.5

0.3

0.2

0.1

0.2 0.3 0.5 0.7 1.0

2.0 3.0 7.0 5.0 10

I C , COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio

10

5.0

2.0

1.0

0.5

0.1

100

50

20

10

5.0

0.2 0.3 0.5 0.7 1.0

2.0 3.0 7.0 5.0 10

I C , COLLECTOR CURRENT (mA)

Figure 12. Input Impedance

LMBT4401LT1 UNIT 1

LMBT4401LT1 UNIT 2

2.0

1.0

0.1

0.2 0.3 0.5 0.7 1.0

2.0 3.0 7.0 5.0 10

I C , COLLECTOR CURRENT (mA)

Figure 14. Output Admittance

2012-11

WILLAS ELECTRONIC CORP.

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