MMBT4401L データシートの表示（PDF） - Unisonic Technologies

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MMBT4401L

NPN GENERAL PURPOSE AMPLIFIER

Unisonic Technologies 

MMBT4401

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified) (Note)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6

V

Collector Current-Continuous

IC

600

mA

Total Device Dissipation

Derate above 25℃

350

mW

PD

2.8

mW/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA (Ta=25°C, unless otherwise specified)

CHARACTERISTIC

SYMBOL

RATING

Junction to Ambient

θJA

357

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

UNIT

°C /W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO IC=0.1mA, IE=0

Collector-Emitter Breakdown Voltage (note)

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Base Cut-off Current

BVCEO

BVEBO

ICEX

IBL

IC=1mA, IB=0

IE=0.1mA, IC=0

VCE=35V, VEB=0.4V

VCE=35V, VEB=0.4V

ON CHARACTERISTICS (note)

hFE1 VCE=1V, IC=0.1mA

DC Current Gain

hFE2

hFE3

hFE4

VCE=1V, IC=1mA

VCE=1V, IC=10mA

VCE=1V, IC=150mA

hFE5 VCE=2V, IC=500mA

Collector-Emitter Saturation Voltage

VCE(SAT1) IC=150mA, IB=15mA

VCE(SAT2) IC=500mA, IB=50mA

Base-Emitter Saturation Voltage

VBE(SAT1) IC=150mA, IB=15mA

VBE(SAT2) IC=500mA, IB=50mA

SMALL SIGNAL CHARACTERISTICS1

Current Gain Bandwidth Product

Collector-Base Capacitance

Emitter-Base Capacitance

Input Impedance

fT VCE=10V, IC=20mA, f=100MHz

Ccb VCB=5V, IE=0, f=140kHz

Ceb VBE=0.5V, IC=0, f=140kHz

hie VCE=10V, IC=1mA, f=1kHz

Voltage Feedback Ratio

hre VCE=10V, IC=1mA, f=1kHz

Small-Signal Current Gain

hfe VCE=10V, IC=1mA, f=1kHz

Output Admittance

SWITCHING CHARACTERISTICS

hoe VCE=10V, IC=1mA, f=1kHz

Delay Time

Rise Time

tD

VCC=30V, VEB=2V

IC=150mA IB1=15mA

tR

VCC=30V, VEB=2V

IC=150mA IB1=15mA

Storage Time

tS

Fall Time

tF

Note: Pulse test: PulseWidth≤300μs, Duty Cycle≤2%

VCC=30V, IC=150mA

IB1= IB2=15mA

MIN

60

40

6

20

40

80

100

40

0.75

250

1

0.1

40

1

TYP

MAX UNIT

V

V

V

µA

µA

300

0.4 V

0.75 V

0.95 V

1.2 V

MHz

6.5 pF

30 pF

15 kΩ

8 ×10-4

500

30 µmhos

15 ns

20 ns

225 ns

30 ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R206-035.F

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