MMBT5551(2008) データシートの表示（PDF） - Micro Commercial Components
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MMBT5551 Datasheet PDF : 2 Pages
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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MMBT5551
Features
• Collector Current: ICM=0.6A
• Collector-Base Voltage: V(BR)CBO=180V
• Operating And Storage Temperatures –55OC to 150OC
• Capable of 0.3Watts of Power Dissipation
• Marking: G1
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
ICBO
IEBO
Collector -Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=120Vdc, IE=0)
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
ON CHARACTERISTICS
160
---
Vdc
180
---
Vdc
6.0
---
Vdc
---
0.1 uAdc
---
0.1 uAdc
hFE-1
DC Current Gain
(VCE=5.0Vdc, IC=1.0mAdc)
hFE-2
DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
hFE-3
V CE(sat)
DC Current Gain
(VCE=5.0Vdc, IC=50mAdc)
Collector-Emitter Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
V BE(sat)
Base-Emitter Saturation Voltage
(IC=50mAdc,IB=5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
80
---
---
100
200
---
50
---
---
---
0.5
Vdc
---
1.0
Vdc
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=30MHz)
100
---
MHz
NPN Plastic
Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 4
www.mccsemi.com
1 of 2
2008/01/01
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