MPSA93 データシートの表示（PDF） - General Semiconductor

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MPSA93

Small Signal Transistors (PNP)

General Semiconductor 

MPSA92, MPSA93

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Collector-Emitter Breakdown Voltage MPSA92 –V(BR)CEO 300

–

–IC = 10 mA, IB = 0

MPSA93 –V(BR)CEO 200

–

Collector-Base Breakdown Voltage MPSA92 –V(BR)CBO 300

–

–IC = 100 µA, IE = 0

MPSA93 –V(BR)CBO 200

–

Emitter-Base Breakdown Voltage

–IE = 100 µA, IC = 0

–V(BR)EBO 5

–

Collector-Base Cutoff Current

–VCB = 200 V, IE = 0

MPSA92 –ICBO

–

–

–VCB = 160 V, IE = 0

MPSA93 –ICBO

–

–

Emitter-Base Cutoff Current

–VEB = 3 V, IC = 0

–IEBO

–

–

DC Current Gain

–IC = 1 mA, –VCE = 10 V

–IC = 10 mA, –VCE = 10 V

–IC = 30 mA, –VCE = 10 V

hFE

25

–

hFE

40

–

hFE

25

–

Collector-Emitter Saturation Voltage

–IC = 20 mA, –IB = 2 mA

–VCEsat

–

–

Base-Emitter Saturation Voltage

–IC = 20 mA, –IB = 2 mA

–VBEsat

–

–

Gain-Bandwidth Product

–IC = 10 mA, –VCE = 20 V, f = 100 MHz

fT

50

–

Collector-Base Capacitance

–VCB = 20 V, IE = 0, f = 1 MHz

MPSA92 CCBO

–

–

MPSA93 CCBO

–

–

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.

Max.

–

–

–

–

–

250

250

100

–

–

–

500

900

–

6

8

2001)

Unit

V

V

V

V

V

nA

nA

nA

–

–

–

mV

mV

MHz

pF

pF

K/W

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