MURHB860CT データシートの表示（PDF） - ON Semiconductor

部品番号

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MURHB860CT

Power Rectifier

ON Semiconductor 

MURHB860CT

THERMAL CHARACTERISTICS (Per Leg)

Rating

Maximum Thermal Resistance, Junction−to−Case

Maximum Thermal Resistance, Junction−to−Ambient

ELECTRICAL CHARACTERISTICS (Per Leg)

Characteristic

Maximum Instantaneous Forward Voltage (Note 1)

(iF = 4.0 A, TC = 150°C)

(iF = 4.0 A, TC = 25°C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated DC Voltage, TC = 150°C)

(Rated DC Voltage, TC = 25°C)

Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%

Symbol

RqJC

RqJA

Value

3.0

50

Unit

°C/W

°C/W

Symbol

vF

iR

trr

Max Unit

2.5

V

2.8

500

mA

10

35

ns

http://onsemi.com

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