MX29LV800B データシートの表示（PDF） - Macronix International

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MX29LV800B

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Macronix International 

MX29LV800T/B

COMMAND DEFINITIONS

Device operations are selected by writing specific ad-

dress and data sequences into the command register.

Writing incorrect address and data values or writing them

in the improper sequence will reset the device to the

read mode. Table 4 defines the valid register command

sequences. Note that the Erase Suspend (B0H) and

Erase Resume (30H) commands are valid only while the

Sector Erase operation is in progress.

TABLE 5. MX29LV800T/B BUS OPERATION

DESCRIPTION

Read

CE

OE WE

L

LH

ADDRESS

A18 A10 A9 A8 A6 A5 A1 A0

A12 A11

A7

A2

AIN

Write

L

HL

AIN

Reset

X

XX

X

Temproary sector unlock

X

XX

AIN

Output Disable

L

HH

X

Standby

Vcc ± 0.3V X X

X

Sector Protect

L

H

L

SA X X X L X H L

Sector Unprotect

L

HL

X XXX HXH L

Sector Protection Verify

L

L H SA X VID X L X H L

Q0~Q7

Dout

DIN(3)

High Z

DIN

High Z

High Z

DIN

DIN

CODE(5)

Q8~Q15

BYTE BYTE

=VIH

=VIL

Dout =High Z

DQ15=A-1

DIN

High Z High Z

DIN High Z

High Z High Z

High Z High Z

X

X

X

X

X

X

NOTES:

1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.

2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.

3. Refer to Table 4 for valid Data-In during a write operation.

4. X can be VIL or VIH.

5. Code=00H/XX00H means unprotected.

Code=01H/XX01H means protected.

6. A18~A12=Sector address for sector protect.

7.The sector protect and chip unprotect functions may also be implemented via programming equipment.

P/N:PM0709

REV. 1.3, JAN. 24, 2002

9

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