DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NGA-386 データシートの表示(PDF) - Sirenza Microdevices => RFMD

部品番号
コンポーネント説明
メーカー
NGA-386
Sirenza
Sirenza Microdevices => RFMD Sirenza
NGA-386 Datasheet PDF : 5 Pages
1 2 3 4 5
Preliminary
Product Description
Sirenza Microdevices’ NGA-386 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.
Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 5 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppres-
sion of intermodulation products.
Small Signal Gain vs. Frequency
25
20
15
dB
10
5
0
01234567
Frequency GHz
NGA-386
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Obsolete
Contact Factory
See Application Note AN-059 for Alternates
Product Features
• High Gain: 18.9dB at 1950Mhz
• Cascadable 50 ohm: 1.2:1 VSWR
• Operates from Single Supply
• Low Thermal Resistance Package
• Unconditionally Stable
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units
Frequency
Min. Typ. Max.
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
2400 MHz
14.5
15.0
15.6
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
2400 MHz
25.8
27.0
27.0
G
Small Signal Gain
850 MHz
18.8 20.9 23.0
dB
1950 MHz
18.9
2400 MHz
18.0
Bandwidth Determined by Return Loss (>10dB)
MHz
5000
Input VSWR
-
DC - 5000 MHz
1.2:1
Output VSWR
-
DC - 5000 MHz
1.3:1
NF
Noise Figure
dB
2000 MHz
2.7
VD
Device Operating Voltage
V
3.5
4.0
4.5
ID
Device Operating Current
mA
30
35
45
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
ID = 35 mA Typ.
RBIAS = 120 Ohms TL = 25ºC
°C/W
144
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-101103 Rev E

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]