NTP45N06 データシートの表示（PDF） - ON Semiconductor
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NTP45N06 Datasheet PDF : 7 Pages
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NTP45N06, NTB45N06
3600
3200
2800
VDS = 0 V
Ciss
2400 Crss
VGS = 0 V
TJ = 25°C
2000
1600
Ciss
1200
800
400
0
10
5 VGS 0 VDS 5
Coss
Crss
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
100
VDS = 30 V
ID = 45 A
VGS = 10 V
tf
tr
td(off)
td(on)
10
12
10
8
Q1
6
QT
Q2
VGS
4
2
ID = 45
TJ = 25°C
0
0 4 8 12 16 20 24 28 32 36
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
50
VGS = 0 V
TJ = 25°C
40
30
20
10
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
dc
10
10 ms
1 ms
RDS(on) Limit
100 ms
1
Thermal Limit
Package Limit
0.1
0.10
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96 1 1.04
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
280
ID = 45 A
240
200
160
120
80
40
0
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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