Philips Semiconductors
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IC(AV)
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction
to soldering point; note 1
CONDITIONS
Ptot = 360 mW; Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
Product specification
PBR941
MIN.
−
−
−
−
−
−
−65
−
MAX. UNIT
20
V
10
V
1.5 V
50
mA
50
mA
360 mW
+150 °C
175 °C
VALUE
320
UNIT
K/W
1998 Aug 10
3