PBR941 データシートの表示（PDF） - NXP Semiconductors.
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PBR941 Datasheet PDF : 16 Pages
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Philips Semiconductors
UHF wideband transistor
Product specification
PBR941
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics
V(BR)CBO collector-base breakdown voltage IC = 100 µA; IE = 0
20
V(BR)CEO collector-emitter breakdown voltage IC = 100 µA; IB = 0
10
V(BR)EBO emitter-base breakdown voltage IE = 10 µA; IC = 0
1.5
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
IEBO
emitter-base leakage current
VEB = 1 V; IC = 0
−
hFE
DC current gain
IC = 5 mA; VCE = 6 V
50
IC = 15 mA; VCE = 6 V
−
AC characteristics
Cre
fT
GUM
F
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
noise figure
IC = 0; VCB = 6 V; f = 1 MHz
−
IC = 15 mA; VCE = 6 V; f = 1 GHz −
IC = 15 mA; VCE = 6 V;
−
Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 6 V;
−
Tamb = 25 °C; f = 2 GHz
ΓS = Γopt; IC = 5 mA; VCE = 6 V; −
f = 1 GHz
ΓS = Γopt; IC = 5 mA; VCE = 6 V; −
f = 2 GHz
−
−
V
−
−
V
−
−
V
−
100 nA
−
100 nA
100 200
100 −
0.3 −
8
−
15
−
9.5 −
1.4 −
2
−
pF
GHz
dB
dB
dB
dB
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
GUM
=
10
log -(---1-----–------S----1---1----S2---)-2---1(---1-2----–------S----2--2-----2---)-
dB
1998 Aug 10
4
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