PH9025L データシートの表示（PDF） - NXP Semiconductors.
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PH9025L Datasheet PDF : 12 Pages
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NXP Semiconductors
PH9025L
N-channel TrenchMOS logic level FET
60
ID
(A)
45
30
003aab548
10 5 4.5 4
VGS (V) = 3.5
40
RDSon
(mΩ)
VGS (V) = 3
30
20
003aab766
3.5
4
15
3
10
4.5
5
10
0
0
0.25
0.5
0.75
1
VDS (V)
0
0
15
30
45
60
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
60
ID
(A)
45
003aab550
2
a
1.6
003aab467
1.2
30
Tj = 150 °C
25 °C
0.8
15
0.4
0
0
1
2
3
4
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
−60
0
60
120
180
Tj (°C)
a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PH9025L_1
Product data sheet
Rev. 01 — 23 August 2007
© NXP B.V. 2007. All rights reserved.
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