DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PMLL4148L データシートの表示(PDF) - NXP Semiconductors.

部品番号
コンポーネント説明
メーカー
PMLL4148L
NXP
NXP Semiconductors. NXP
PMLL4148L Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
NXP Semiconductors
PMLL4148L; PMLL4448
High-speed switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb = 25 °C
[1] -
-
65
65
Max
500
200
+200
+200
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge.
Unit
mW
°C
°C
°C
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max
[1] -
-
350
-
-
300
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
VF
forward voltage
PMLL4148L
IF = 50 mA
-
-
PMLL4448
IF = 5 mA
620 -
IF = 100 mA
-
-
IR
reverse current
VR = 20 V
VR = 20 V; Tj = 150 °C
-
-
-
-
IR
reverse current
PMLL4448
VR = 20 V; Tj = 100 °C
-
-
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
-
trr
reverse recovery time
[1] -
-
VFR
forward recovery voltage
[2] -
-
[1] When switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 50 mA; tr = 20 ns.
Max Unit
1
V
720 mV
1
V
25 nA
50 μA
3
μA
4
pF
4
ns
2.5 V
PMLL4148L_PMLL4448
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 1 February 2011
© NXP B.V. 2011. All rights reserved.
3 of 11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]