MPSA77 データシートの表示（PDF） - Central Semiconductor
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MPSA77 Datasheet PDF : 3 Pages
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MPSA75
MPSA76
MPSA77
SILICON
PNP DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA75 series
devices are silicon PNP Darlington transistors,
manufactured by the epitaxial planar process, designed
for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
JA
MPSA75 MPSA76 MPSA77
40
50
60
40
50
60
10
500
625
-65 to +150
200
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=30V
ICBO
VCB=40V
ICBO
VCB=50V
ICES
VCE=30V
ICES
VCB=40V
ICES
VCB=50V
IEBO
VEB=10V
BVCBO
IC=100μA
BVCES
IC=100μA
VCE(SAT) IC=100mA, IB=0.1mA
VBE(ON)
VCE=5.0V, IB=100mA
hFE
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=100mA
fT
VCE=5.0V, IC=10mA
MPSA75
MIN MAX
- 100
-
-
-
-
- 500
-
-
-
-
- 100
40 -
40 -
- 1.5
- 2.0
10K -
10K -
125 -
MPSA76
MIN MAX
-
-
- 100
-
-
-
-
- 500
-
-
- 100
50 -
50 -
- 1.5
- 2.0
10K -
10K -
125 -
MPSA77
MIN MAX
-
-
-
-
- 100
-
-
-
-
- 500
- 100
60 -
60 -
- 1.5
- 2.0
10K -
10K -
125 -
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
MHz
R1 (18-March 2014)
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