F14N05 データシートの表示（PDF） - Fairchild Semiconductor
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F14N05 Datasheet PDF : 8 Pages
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RFD14N05, RFD14N05SM, RFP14N05
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate above 25o C
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFD14N05, RFD14N05SM,
RFP14N05
50
50
± 20
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress on ly rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25o C to 150oC .
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V (Figure 9)
50
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2
Zero Gate Voltage Drain Current
IDSS VDS = Rated BVDSS , VG S = 0V
-
VDS = 0.8 x Rated BV DSS, VGS = 0V, T C = 150oC
-
Gate to Source Leakage Current
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2)
rDS(ON) ID = 14A, VGS = 10V, (Figure 11)
-
Turn-On Time
Turn-On Delay Time
Rise Time
tO N
VDD = 25V, ID ≈ 14A, VGS = 10V,
-
td(ON)
RG S = 25Ω, RL = 1.7Ω
(Figure 13)
-
tr
-
Turn-Off Delay Time
td(OFF)
-
Fall Time
tf
-
Turn-Off Time
tOFF
-
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Qg(TOT)
Qg(10)
Qg(TH)
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 40V, ID = 14A,
-
RL = 2.86Ω
-
Ig(REF) = 0.4mA
(Figure 13)
-
Input Capacitance
Output Capacitance
CISS VDS = 25V, VG S = 0V, f = 1MHz
-
COSS (Figure 12)
-
Reverse Transfer Capacitance
CRSS
-
Thermal Resistance Junction to Case
RθJC
-
Thermal Resistance Junction to Ambient
RθJA TO-251 and TO-252
-
RθJA TO-220
-
TYP
-
-
-
-
-
-
-
14
26
45
17
-
-
-
-
570
185
50
-
-
-
MAX
-
4
25
250
±100
0.100
60
-
-
-
-
100
40
25
1.5
-
-
-
3.125
100
80
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 14A
-
-
1.5
V
Diode Reverse Recovery Time
trr
ISD = 14A, dISD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1
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