RS3AHE3_A/I データシートの表示（PDF） - Vishay Semiconductors
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RS3AHE3_A/I Datasheet PDF : 4 Pages
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RS3A, RS3B, RS3D, RS3G, RS3J, RS3K
Vishay General Semiconductor
100
TJ = 125 °C
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = - 40 °C
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
TJ = 125 °C
10
1
TJ = 75 °C
TJ = 25 °C
0.1
100
RS3A thru RS3G
RS3J thru RS3K
10
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
10
1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20) MIN.
0.185 (4.69) MAX.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.320 (8.13) REF.
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 25-Apr-14
3
Document Number: 88709
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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