S330D(2004) データシートの表示（PDF） - Vishay Semiconductors

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S330D
(Rev.:2004)

Standard Avalanche Sinterglass Diode

Vishay Semiconductors 

VISHAY

Standard Avalanche Sinterglass Diode

S330D

Vishay Semiconductors

Features

• Controlled avalanche characteristics

• Glass passivated junction

• Low reverse current

• Hermetically sealed package

Applications

High voltage

Power supplies

949539

Mechanical Data

Case: SOD-57 Sintered glass case

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: approx. 369 mg

Parts Table

Part

S330D

Type differentiation

VR = 1000 V; IFAV = 2 A

SOD-57

Package

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse voltage = Repetitive

peak reverse voltage

see electrical characteristics

Peak forward surge current

tp = 10 ms, half-sinewave

Average forward current

Tamb = 50 °C, l = 10 mm

Max. pulse energy in avalanche I(BR)R = 1 A, inductive load

mode, non repetitive (inductive

load switch off)

Junction and storage

temperature range

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Junction ambient

Lead length l = 10 mm,

TL = constant

Symbol

VR = VRRM

IFSM

IFAV

ER

Tj = Tstg

Value

Unit

1000

V

50

A

2.0

A

20

mJ

- 55 to + 175

°C

Symbol

RthJA

Value

Unit

45

K/W

Document Number 86053

Rev. 1.5, 11-Aug-04

www.vishay.com

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