S8050 データシートの表示（PDF） - Galaxy Semi-Conductor

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S8050

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

Silicon Epitaxial Planar Transistor

FEATURES

z High Collector Current.(IC= 500mA).

z Complementary To S8550.

Pb

Lead-free

z Excellent HFE Linearity.

z High total power dissipation.(PC=300mW).

S8050

APPLICATIONS

z High Collector Current..

ORDERING INFORMATION

Type No.

Marking

S8050

J3Y

SOT-23

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

VCBO

Collector-Base Voltage

40

VCEO

Collector-Emitter Voltage

25

VEBO

Emitter-Base Voltage

5

IC

Collector Current -Continuous

500

PC

Collector Dissipation

300

Tj,Tstg

Junction and Storage Temperature

-55 to +150

Units

V

V

V

mA

mW

℃

C079

Rev.A

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