S8050L-D-T92-B(2009) データシートの表示（PDF） - Unisonic Technologies
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S8050L-D-T92-B Datasheet PDF : 4 Pages
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S8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
700
mA
Collector Dissipation(Ta=25°C)
Pc
1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO Ic=100μA, IE=0
BVCEO Ic=1mA, IB=0
BVEBO IE=100μA, Ic=0
ICBO VCB=30V, IE=0
IEBO VEB=5V, Ic=0
hFE1 VCE=1V, Ic=1mA
hFE2 VCE=1V, Ic=150 mA
hFE3 VCE=1V, Ic=500mA
VCE(SAT) Ic=500mA, IB=50mA
VBE(SAT) Ic=500mA, IB=50mA
VBE VCE=1V, Ic=10mA
fT VCE=10V, Ic=50mA
Cob VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
MIN TYP MAX UNIT
30
V
20
V
5
V
1 μA
100 nA
100
120 110 400
40
0.5 V
1.2 V
1.0 V
100
MHz
9.0
pF
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-013.B
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