S8050 データシートの表示（PDF） - Weitron Technology
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S8050 Datasheet PDF : 4 Pages
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NPN General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
S8050
TO-92
1. EMITTER
1
2. BASE
3. COLLECTOR
23
Value
25
40
5.0
500
0.625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
Collector Cutoff Current (VCE= 20 Vdc, IB =0)
Collector Cutoff Current (VCB= 40 Vdc, IE=0)
Emitter Cutoff Current (VEB= 3.0Vdc, I C =0)
Symbol
Min
Max
Unit
V(BR)CEO 25
-
Vdc
V(BR)CBO 40
-
V(BR)EBO 5.0
-
ICE0
-
0.1
Vdc
Vdc
uAdc
ICBO
-
0.1
uAdc
IEBO
-
0.1
uAdc
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