S8550 データシートの表示（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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S8550

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

TRANSISTOR(PNP)

FEATURES

z Complimentary to S8050

z Collector current: IC=0.5A

MARKING : 2TY

SOT-23

SS8 95051 02

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-40

-25

-5

-0.5

0.3

150

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Units

V

V

V

A

W

℃

℃

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

IC = -100μA, IE=0

-40

Collector-emitter breakdown voltage

V(BR)CEO

IC =-1mA, IB=0

-25

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA, IC=0

-5

Collector cut-off current

ICBO

VCB= -40V, IE=0

Collector cut-off current

ICEO

VCE= -20V, IB=0

Emitter cut-off current

IEBO

VEB= -3V, IC=0

DC current gain

hFE(1)

VCE= -1V, IC= -50mA

120

hFE(2)

VCE= -1V, IC= -500mA

50

Collector-emitter saturation voltage

VCE(sat) IC=-500mA, IB= -50mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=-500mA, IB= -50mA

VCE= -6V, IC= -20mA

fT

f=30MHz

150

CLASSIFICATION OF hFE(1)

Rank

Range

L

120-200

H

200-350

１　

JinYu

semiconductor

www.htsemi.com

MAX UNIT

V

V

V

-0.1 μA

-0.1 μA

-0.1 μA

400

-0.6 V

-1.2 V

MHz

Ｄａｔｅ：２０１１／０５

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