SD1727 データシートの表示（PDF） - Advanced Semiconductor
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SD1727 Datasheet PDF : 2 Pages
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SD1727
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1727 is a Common
Emitter Device Designed for High
Linearity Class A/AB HF Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
IC
10 A
VCB
PDISS
TJ
T STG
θ JC
110 V
233 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.75 OC/W
PACKAGE STYLE .550 4L STUD
1 = COLLECTOR
3 = BASE
2 &4 =EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 100 mA
BVCES
IC = 100 mA
BVCBO
IC = 100 mA
BVEBO
IE = 10 mA
ICES
VCE = 60 V
ICEO
VCE = 30 V
hFE
VCE = 6.0 V
IC = 1.4 A
MINIMUM TYPICAL MAXIMUM
55
110
110
4.0
5.0
5.0
15
50
UNITS
V
V
V
V
mA
mA
---
Cob
VCB = 50 V
f = 1.0 MHz
220
pF
PG
14
IMD3
ηC
VCE = 50 V
Icq = 100 mA
Pout = 150 W (PEP)
f = 30 MHz
37
dB
-37
-30
dBc
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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