SE1020W データシートの表示（PDF） - SiGe Semiconductor, Inc.

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SE1020W

1.25 Gb/s Transimpedance Amplifier Product Preview

SiGe Semiconductor, Inc. 

SE1020W

1.25 Gb/s Transimpedance Amplifier

Product Preview

Applications

Gigabit-Ethernet systems, test equipment

and modules

OC-24 fibre optic modules and line

termination

Fibre Channel optical systems

Features

Single +3.3 V power supply

Power dissipation = 110 mW (typ)

Input noise current = 180 nA rms when used

with a 0.7 pF detector

Transimpedance gain = 4.0 kΩ into a 50 Ω

load (differential)

On-chip automatic gain control gives input

current overload of 2.6 mA pk and max

output voltage swing of 300 mV pk-pk

Differential 50 Ω outputs

Bandwidth (-3 dB) = 1.2 GHz

Wide data rate range = 50 Mb/s to 1.25 Gb/s

Constant photodiode reverse bias voltage =

1.5 V (anode to input, cathode to VCC)

Minimal external components, supply

decoupling only

Operating junction temperature range =

-40°C to +125°C

Ordering Information

Type

SE1020W

Package

Bare Die

Remark

None

Functional Block Diagram

Product Description

SiGe Semiconductor offers a portfolio of optical

networking ICs for use in high-performance

optical transmitter and receiver functions, from

155 Mb/s up to 12.5 Gb/s.

SiGe Semiconductor’s SE1020W is a fully

integrated, silicon bipolar transimpedance

amplifier; providing wideband, low noise

preamplification of signal current from a

photodetector. It features differential outputs and

incorporates an automatic gain control

mechanism to increase dynamic range, allowing

input signals up to 2.6 mA peak. A decoupling

capacitor on the supply is the only external

circuitry required. A system block diagram is

shown after the functional description, on page 3.

SE1020

TzAmp

1.25 Gb/s

VCC or +ve supply

Automatic Gain Control

Integrator Rectifier

Input

Current

TZ_IN

Rf

Tz Amp

Bandgap

Reference

Output

Driver

50 Ω

50 Ω

OUTP

OUTN

42-DST-01 Rev 1.3 May 27/02

Confidential

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